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CVD SiC Components for Semiconductor Equipment SiC Ring SiC Electrode Dry Etch

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CVD SiC Components for Semiconductor Equipment SiC Ring SiC Electrode Dry Etch

Nazwa marki:	ZMSH
MOQ:	2
Cena £:	20USD
Szczegóły opakowania:	niestandardowe kartony
Warunki płatności:	T/T

Szczegółowe informacje

Opis produktu

Szczegółowe informacje

Miejsce pochodzenia:

Chiny

Tworzywo:

Tworzywo

Maksymalna średnica:

Maks. 370 mm

Oporność:

Niska rozdzielczość <0,02 Ω·cm; Średnia rozdzielczość 0,2–25 Ω·cm; Wysoka rozdzielczość >100 Ω

RRG:

Stan powierzchni:

grunt

Precyzja obróbki:

<10 µm

Możliwość Supply:

Według przypadku

Podkreślić:

CVD polycrystalline silicon carbide components

SiC wafer for AI applications

silicon carbide components with AR coating

Opis produktu

For Semiconductor Equipment Applications

c are key consumable and structural parts used in semiconductor front-end equipment. They are widely applied in Dry Etch, EPI, Diffusion, and RTP processes.

With excellent high purity, thermal conductivity, plasma corrosion resistance, high-temperature stability, low particle generation, and precision machinability, CVD SiC components are suitable for demanding semiconductor process environments.

Dry Etch Application

Image suggestion: Use the Dry Etch equipment image and component exploded view.

In dry etching equipment, CVD SiC and silicon components are mainly installed inside the process chamber. They are used for plasma control, wafer edge protection, electrode systems, chamber protection, and process uniformity improvement.

Typical Components

Component	Material	Application
Inner Electrode	Si / SiC	Used in the electrode system to control plasma reaction
Outer Electrode	Si / SiC	Works with the inner electrode to improve etching uniformity
C-Shroud Ring	Si	Used for chamber protection and plasma/gas flow control
Hot Edge Ring	Si / SiC	Protects wafer edges and improves edge etching performance
Ground Cover Ring	Quartz	Used for grounding and chamber protection
Couple Ring	Quartz	Supporting and coupling component inside the chamber
Quartz Ring	Quartz	Used for sealing, support, or insulation in the chamber

Key Advantages

CVD SiC components offer excellent resistance to plasma corrosion in fluorine-based and chlorine-based etching environments. They help reduce particle contamination, minimize component wear, extend maintenance intervals, and improve process stability.

CVD SiC Components for Semiconductor Equipment SiC Ring SiC Electrode Dry Etch 0

Main Product Series

Image suggestion: Use the product series image showing Si Electrode, Si Ring, SiC Ring, and SiC Electrode.

Si Electrode

Si Electrodes are mainly used in dry etching equipment as electrode components. They are suitable for mature semiconductor processes and equipment spare part replacement.

Item	Specification
Material	Single Crystal Silicon
Max Diameter	Max 480 mm
Resistivity	Low Res. <0.02 Ω·cm; Middle Res. 1–4 Ω·cm; High Res. 70–90 Ω·cm
RRG	<5%
Gas Hole	Diameter 0.2–0.8 mm
Surface Condition	Polished / Lapped / Ground
Machining Precision	<10 μm
Quality Inspection	Free of chips, scratches, cracks, stains and other defects

CVD SiC Components for Semiconductor Equipment SiC Ring SiC Electrode Dry Etch 1 Si Ring

Si Rings are used in etching chambers for wafer edge protection, support, and plasma control.

Item	Specification
Material	Single Crystal Silicon / Multi Crystal Silicon
Max Diameter	Max 480 mm
Resistivity	Low Res. <0.02 Ω·cm; Middle Res. 1–4 Ω·cm; High Res. 70–90 Ω·cm
RRG	<5%
Surface Condition	Polished / Lapped / Ground
Machining Precision	<10 μm
Quality Inspection	Free of chips, scratches, cracks, stains and other defects

CVD SiC Ring

CVD SiC Rings are used as edge rings, protection rings, and support rings in Dry Etch, EPI, RTP, and other semiconductor equipment.

Item	Specification
Material	CVD SiC
Max Diameter	Max 370 mm
Resistivity	Low Res. <0.02 Ω·cm; Middle Res. 0.2–25 Ω·cm; High Res. >100 Ω·cm
RRG	<5%
Surface Condition	Ground
Machining Precision	<10 μm
Quality Inspection	Free of chips, scratches, cracks, stains and other defects

CVD SiC Electrode

CVD SiC Electrodes are used as key electrode components in dry etching equipment. Compared with conventional silicon electrodes, CVD SiC electrodes provide better corrosion resistance and longer service life.

Item	Specification
Material	CVD SiC
Max Diameter	Max 330 mm
Resistivity	Low Res. <0.02 Ω·cm; Middle Res. 0.2–25 Ω·cm; High Res. >100 Ω·cm
RRG	<5%
Surface Condition	Ground
Machining Precision	<10 μm
Quality Inspection	Free of chips, scratches, cracks, stains and other defects

CVD SiC Components for Semiconductor Equipment SiC Ring SiC Electrode Dry Etch 2 Material Properties of CVD Polycrystalline SiC

Image suggestion: Use the material property table image.

CVD polycrystalline SiC is produced by chemical vapor deposition. It features a dense structure, high purity, excellent corrosion resistance, and strong stability in semiconductor clean process environments.

Property	Unit	Typical Value
Density	g/cm³	3.21–3.22
Flexural Strength	MPa	320–380
Thermal Conductivity	W/m·K	240–360
Grain Size	μm	5–10
Purity	%	99.99997
Vickers Microhardness	HV	3100–3700
Elastic Modulus	GPa	450–530
XRD Rate	-	0.65–1.1
CTE, RT to 1000°C	10⁻⁶/K	4.8–5.1

CVD SiC Components for Semiconductor Equipment SiC Ring SiC Electrode Dry Etch 3

Product Advantages

High Purity

The purity of CVD SiC can reach 99.99997%, helping reduce the risk of metal contamination in semiconductor front-end processes.

Excellent Plasma Corrosion Resistance

CVD SiC maintains good stability in fluorine-based and chlorine-based plasma environments, reducing component wear and particle generation.

High Thermal Conductivity

With thermal conductivity of 240–360 W/m·K, CVD SiC helps improve thermal field uniformity and process consistency.

High-Temperature Stability

CVD SiC components are suitable for EPI, Diffusion, RTP, and other high-temperature processes. They maintain good dimensional stability during long-term use.

High Hardness and Wear Resistance

High Vickers hardness provides excellent wear resistance and helps extend component service life.

Custom Machining Available

Products can be customized according to customer drawings, including outer diameter, inner diameter, holes, grooves, steps, chamfers, surface condition, and assembly precision.

Application Fields

CVD polycrystalline SiC components are widely used in:

Dry etching equipment
Epitaxy equipment
Diffusion furnace equipment
RTP equipment
Semiconductor equipment OEM parts
Wafer fab spare part replacement
Si, SiC, GaN, GaAs wafer processes

Q&A

Q1: What are CVD polycrystalline SiC components used for?

CVD polycrystalline SiC components are mainly used in semiconductor front-end equipment, including Dry Etch, EPI, Diffusion, and RTP systems. Typical products include SiC rings, SiC electrodes, edge rings, susceptors, SiC boats, and dummy wafers.

Q2: What are the advantages of CVD SiC compared with quartz or silicon parts?

CVD SiC offers better plasma corrosion resistance, high-temperature stability, thermal conductivity, hardness, and service life. It can reduce particle generation and component wear in harsh semiconductor process environments.

Q3: What materials are available for these components?

We can provide components made from CVD SiC, single crystal silicon, multi-crystal silicon, and quartz, depending on the application and equipment requirements.

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szczegółowe informacje o produktach

CVD SiC Components for Semiconductor Equipment SiC Ring SiC Electrode Dry Etch

Podłoże szafirowe

Sapphire Optical Windows

Płytka z węglika krzemu

Szafirowa tuba

Podłoże półprzewodnikowe

Syntetyczny kamień szlachetny

Części ceramiczne

Sprzęt naukowy laboratoryjny

Sapphire Crystal Watch Case

Pudełko na wafle

Nadprzewodzące cienkie podłoże monokrystaliczne

Opłatek azotku galu

Podłoże szafirowe

Sapphire Optical Windows

Płytka z węglika krzemu

Szafirowa tuba

Podłoże półprzewodnikowe

Syntetyczny kamień szlachetny

Części ceramiczne

Sprzęt naukowy laboratoryjny

Sapphire Crystal Watch Case

Pudełko na wafle

Nadprzewodzące cienkie podłoże monokrystaliczne

Opłatek azotku galu

CVD SiC Components for Semiconductor Equipment SiC Ring SiC Electrode Dry Etch

CVD polycrystalline silicon carbide components

SiC wafer for AI applications

silicon carbide components with AR coating

For Semiconductor Equipment Applications

Dry Etch Application

Typical Components

Key Advantages

Main Product Series

Si Electrode

CVD SiC Ring

CVD SiC Electrode

Product Advantages

High Purity

Excellent Plasma Corrosion Resistance

High Thermal Conductivity

High-Temperature Stability

High Hardness and Wear Resistance

Custom Machining Available

Application Fields

Q&A

Q1: What are CVD polycrystalline SiC components used for?

Q2: What are the advantages of CVD SiC compared with quartz or silicon parts?

Q3: What materials are available for these components?